Nanoscale Pattern Formation in Non-Equilibrium Surface Chemical Reactions

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Chemical Reactions Using a Non-Equilibrium Wigner Function Approach

A three-dimensional model of binary chemical reactions is studied. We consider an ab initio quantum two-particle system subjected to an attractive interaction potential and to a heat bath at thermal equilibrium at absolute temperature T > 0. Under the sole action of the attraction potential, the two particles can either be bound or unbound to each other. While at T = 0, there is no transition b...

متن کامل

Non-invasive estimation of dissipation from non-equilibrium fluctuations in chemical reactions.

We show how to extract an estimate of the entropy production from a sufficiently long time series of stationary fluctuations of chemical reactions. This method, which is based on recent work on fluctuation theorems, is direct, non-invasive, does not require any knowledge about the underlying dynamics and is applicable even when only partial information is available. We apply it to simple stocha...

متن کامل

Pattern Formation in Diffusion-Limited Reactions

The conditions for macroscopic segregation of A and B in a steady-state A + B ---, 0 reaction are studied in infinite systems. Segregation occurs in one and two dimensions and is marginal for d = 3. We note the dependence of these results on the precise experimental conditions assumed in the theory. We also note the difference between these results and our earlier ones for finite systems where ...

متن کامل

Nanoscale Surface and Sub-Surface Chemical Analysis of SiGe Nanowires

Si/Si1-xGex axial heterostructured nanowires (hNW) are under investigation for downscaling of metaloxide-semiconductor field-effect transistors (MOSFETs). New architectures based on vertically aligned nanowires tunnel-FETs are promising candidates for reduced power dissipation and low voltage operation [1]. The axial growth of lattice mismatched heterostructures would allow band-gap engineering...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Progress of Theoretical Physics Supplement

سال: 2006

ISSN: 0375-9687

DOI: 10.1143/ptps.165.119